More Efficient, Cost-Effective Semiconductor Devices

Technology #15314

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Arthur F. Hebard
Sefaattin Tongay
Managed By
Richard Croley
Assistant Director 352-392-8929
Patent Protection
US Patent 9,362,365

Offers Superior Stability in High Power and High Frequency Applications

This cost-effective semiconductor device has superior stability for high-temperature, high-power and high-frequency applications. University of Florida Researchers have created graphene (zero gap semiconductor), bilayer graphene, multi-layer graphene, or graphite (semimetal)/semiconductor based devices capable of unrivaled device efficiency at lower costs to manufacturers. One of the most remarkable attributes of these junctions is their ability to operate under extreme temperature conditions because of their chemical stability as well as the ability to engineer device properties by simple chemical doping. The proposed carbon-based devices will be useful in a wide range of electrical, thermal, photovoltaic and sensing devices and offers unprecedented control over electrical properties. Tunability of electrical characteristics offers flexible design strategies and attractive savings.


A new generation of electronic devices and sensors that can be used for enhanced efficiency in MESFETs, HEMTs, OFETs, LEDs and MOSFETs


  • Barrier heights at the carbon-semiconductor interfaces can be adjusted (by chemical doping) as desired depending on the application, thereby giving companies opportunities to change the operating parameters/properties of devices
  • Higher (lower) barrier heights allowing for an exponential decrease (increase) in current for fixed voltages and increased device efficiency
  • Stability at high temperatures, allows GaAs, SiC and GaN based MESFET and HEMT devices to operate for longer periods of time without suffering overheating related degradation and decreasing replacement costs
  • Designed for reduced heating effects, decreased energy losses and improved product quality
  • Abundant carbon-based supply, offering a simple, non- destructive, efficient, inexpensive means of fabrication
  • Applicable to devices with electrical, mechanical or thermal properties, making it profitable across a broad range of products


Traditional metal-semiconductor (M-S) interfaces are the main components of MESFETs, HEMTs, OFETs and LEDs. However, since conventional M-S junctions deteriorate at high temperatures, the above-mentioned devices not only become non-functional due to local overheating effects but also high-temperature applications are limited. Moreover regular M-S interfaces yield fixed barrier heights at the M-S interface. The barrier height, which only can be adjusted by judicious choice of metals grown onto the semiconductor, is the main factor in determining device characteristics, efficiency, speed and durability. In addition, during the growth process numerous defects are created at the interface giving slower response times. If a material can be found that can withstand extreme conditions without causing device degradation and in which the physical properties can easily be adjusted without damaging the interface during the growth/deposition process, then higher operation temperatures, efficiency, stability and less power consumption at constant voltage would result. Researchers at the University of Florida have designed carbon/semiconductor junctions capable of decreasing these unnecessary losses and increasing efficiency and operation temperatures as well as demonstrating the use of such junctions as detectors, sensors, photovoltaics and components of various FET devices while simultaneously offering increased device performance at economical prices.