Method for Producing Crack-free Nitride Films

Technology #11971

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Researchers
Olga Kryliouk Ph.D.
Hyun Jong Park
Timothy J. Anderson
Managed By
Richard Croley
Assistant Director 352-392-8929
Patent Protection
US Patent 8,946,674

Invention

Group III-nitride semiconductors have received considerable attention over the past decade in part for their role in revolutionizing the LED market with their efficient blue and near-UV light emitters, and their stability in high-power, high-frequency, and high temperature electronic devices. For a variety of electronic device applications, silicon is considered a good candidate for growing III-nitride materials. This method tends to produce materials that show high strain, high dislocations density, and cracks. Researchers at the University of Florida have created a nanostructured interlayer on the silicon surface to prevent cracking during the growth of thick films.

Applications

Growing crack-free thick group-III nitride films for use in electronics, optoelectronics, and semiconductors

Advantages

  • Reduces manufacturing costs by using silicon substrates that are widely available at low cost
  • Enables improved quality of group-III nitride-based devices, increasing end user satisfaction
  • Offers broad application since other semiconductor materials such as carbon nanotubes can be arranged on the nanostructured interlayer
  • Eliminates defects in numerous group-III nitride devices such as semiconductors and wireless components, creating a competitive advantage
  • Integrates III-nitrides into Si-devices technology, enabling use of current silicon manufacturing equipment
  • Enables direct Ohmic contact formation on Si substrate, permitting resistance and conductivity tests

Technology

This invention uses a nanostructured interlayer for thick group-III nitrides grown on a silicon substrate to minimize the residual stress and eliminate cracking during the cooling procedure. Specifically, this invention is a layered group-III nitride article, including a single crystal silicon substrate and a nanostructured interlayer placed between the group-III nitride layer and silicon substrate. The interlayer is a plurality of crystalline nanorods. The nanostructured interlayer relieves much of the stress that occurs between the silicon substrate and group-III nitride film and thus results in a crack-free, high structural quality material which has potential for a variety of electronic and optoelectronic device applications.